| Reactive Ion Etching | |
|---|---|
| Model | RIE |
| Machine Dimension | W1470 L1000 H1800 |
| Substrate size | 1~4″ wafer |
| Substrate batch | 1 wafer |
| RF power | 600w, 13.56MHz |
| Process gas or fluid | O2, He, CF4, SF6 |
| Substrate motion | Manual |
| System control | touch pc |
| Base pressuse | ≤5.0E-7 torr |
